Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films : Incorporation of n- and p-type dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high… Mehr…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. 104 pp. Englisch, Books<
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the … Mehr…
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Buch (fremdspr.) Taschenbuch, LAP LAMBERT Academic Publishing, 14.07.2011, LAP LAMBERT Academic Publishing, 2011<
Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established selle… Mehr…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000, Books<
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Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000., Books
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MOCVD growth and electrical characterisation of InAs thin films : Incorporation of n- and p-type dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high… Mehr…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], nach der Bestellung gedruckt Neuware - Printed after ordering - Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. 104 pp. Englisch, Books<
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the … Mehr…
Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation of InAs has hindered the development of devices employing this material system. Few systematic studies have been conducted on InAs grown by metalorganic chemical vapour deposition (MOCVD). The majority of recent InAs research has been device orientated and only a few reports of Zn and Sn doped InAs have appeared in print. Basic material characterisation has consequently been neglected. It is the aim of this book to contribute towards a better understanding of the fundamental material characteristics and in particular to improve on the current understanding of the growth dynamics of InAs. For this purpose, InAs epitaxial layers are grown by the MOCVD technique. The emphasis is on gaining an understanding of the influence of various n- and p-type dopants on the electrical and structural properties of the material as well as on the surface morphology of the material. Buch (fremdspr.) Taschenbuch, LAP LAMBERT Academic Publishing, 14.07.2011, LAP LAMBERT Academic Publishing, 2011<
Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established selle… Mehr…
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000, Books<
NEW BOOK. Versandkosten: EUR 9.37 PBShop.store UK, Fairford, GLOS, United Kingdom [190245] [Rating: 5 (von 5)]
Precious Shamba: MOCVD growth and electrical characterisation of InAs thin films Incorporation of n and ptype dopants in InAs thin films using the MOCVD technique - Taschenbuch
[EAN: 9783845409887], Neubuch, [PU: LAP LAMBERT Academic Publishing], New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000., Books
NEW BOOK. Versandkosten: EUR 4.58 PBShop.store US, Wood Dale, IL, U.S.A. [8408184] [Rating: 5 (von 5)]
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Many quantum confined devices such as lasers and high electron mobility transistors make use of the....
Detailangaben zum Buch - MOCVD growth and electrical characterisation of InAs thin films
EAN (ISBN-13): 9783845409887 ISBN (ISBN-10): 3845409886 Gebundene Ausgabe Taschenbuch Erscheinungsjahr: 2011 Herausgeber: LAP Lambert Acad. Publ.
Buch in der Datenbank seit 2009-10-06T10:10:48+02:00 (Zurich) Detailseite zuletzt geändert am 2023-06-21T04:57:50+02:00 (Zurich) ISBN/EAN: 3845409886
ISBN - alternative Schreibweisen: 3-8454-0988-6, 978-3-8454-0988-7 Alternative Schreibweisen und verwandte Suchbegriffe: Titel des Buches: thin films, seeing through films
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