A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Mehr…
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Epitaxial Growth of Nitrides on Germanium Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Asp Vub Pr<
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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Mehr…
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Buch (fremdspr.) Ruben Lieten Taschenbuch, Asp Vub Pr, 01.09.2009, Asp Vub Pr, 2009<
Thalia.de
Nr. 18217686. Versandkosten:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00) Details...
(*) Derzeit vergriffen bedeutet, dass dieser Titel momentan auf keiner der angeschlossenen Plattform verfügbar ist.
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium o… Mehr…
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements., Materials Science<
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transis… Mehr…
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements., Materials Science<
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Mehr…
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Epitaxial Growth of Nitrides on Germanium Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Asp Vub Pr<
- No. 18217686. Versandkosten:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00)
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Mehr…
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Buch (fremdspr.) Ruben Lieten Taschenbuch, Asp Vub Pr, 01.09.2009, Asp Vub Pr, 2009<
Nr. 18217686. Versandkosten:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00)
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium o… Mehr…
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements., Materials Science<
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transis… Mehr…
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements., Materials Science<
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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Detailangaben zum Buch - Epitaxial Growth of Nitrides on Germanium
EAN (ISBN-13): 9789054874850 ISBN (ISBN-10): 9054874856 Taschenbuch Erscheinungsjahr: 2009 Herausgeber: Asp Vub Pr 162 Seiten Gewicht: 0,340 kg Sprache: eng/Englisch
Buch in der Datenbank seit 2009-11-25T23:49:45+01:00 (Zurich) Detailseite zuletzt geändert am 2021-11-13T20:34:10+01:00 (Zurich) ISBN/EAN: 9054874856
ISBN - alternative Schreibweisen: 90-5487-485-6, 978-90-5487-485-0 Alternative Schreibweisen und verwandte Suchbegriffe: Autor des Buches: ruben, annick Titel des Buches: germanium, nitride
