2013, ISBN: 9781461468219

[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Mehr…

[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-¿ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 216, [GW: 494g], 2013, Banküberweisung, PayPal, Klarna-Sofortüberweisung<

2013, ISBN: 9781461468219

[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Mehr…

[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-¿ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book., DE, [SC: 2.79], Neuware, gewerbliches Angebot, 216, [GW: 494g], 2013, PayPal<

2023, ISBN: 9781461468219

[ED: Buch], [PU: Springer New York], Neuware - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Mehr…

[ED: Buch], [PU: Springer New York], Neuware - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-¿ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 241x160x15 mm, 216, [GW: 494g], Banküberweisung, PayPal<

2013, ISBN: 1461468213

2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik… Mehr…

2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik, Schaltkreise und Komponenten (Bauteile), BallisticEffectDevices; BiaxialStrainedSiTechnology; CompactMOSFETModels; ElectronDevices; MOSFETsatNanoscale; NanoscaleMOSTransistors; NanoscaleMOSFET; TransistorQuantumEffects, mit Schutzumschlag 11, [PU:Springer New York; Springer US]<

ISBN: 9781461468219

Hardback, [PU: Springer-Verlag New York Inc.], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Mehr…

Hardback, [PU: Springer-Verlag New York Inc.], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given., Nanotechnology<