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Air Gap Structures for Advanced Metallization Schemes: Development and Electrical Characterization - Stich Andreas
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Stich Andreas:

Air Gap Structures for Advanced Metallization Schemes: Development and Electrical Characterization - Taschenbuch

ISBN: 3639060881

Taschenbuch, [EAN: 9783639060881], Vdm Verlag, Vdm Verlag, Book, [PU: Vdm Verlag], Vdm Verlag, 60448011, Ingenieurwesen & Technik, 60603011, Atomenergie, 60458011, Bauwesen, 60575011, Bioengineering, 60449011, Chemie für Ingenieure, 60508011, Computertechnik für Ingenieure, 60625011, Design für Ingenieure, 60516011, Elektrotechnik, 60628011, Energie, 60571011, Fahrzeugtechnik, 60652011, Forschung, 60543011, Industrie, Herstellung & Abläufe, 60565011, Luft- & Raumfahrt, 60636011, Management, 108498011, Marine, 60637011, Materialien, 60556011, Materialwissenschaft, 60580011, Mechanik, 60610011, Nachschlagewerke, 1320252031, Patente & Erfindungen, 60604011, Petroleum, Bergbau & Erde, 60651011, Stromanalagen, 60618011, Telekommunikation, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 56441011, Technologie, 56447011, Erneuerbare Energien, 56448011, Innovationen, 1320311031, Nachschlagewerke, 56444011, Nanotechnologie, 56449011, Philosophie der Technologie, 56445011, Risiken, 56446011, Sicherheit & Gesundheit, 273011011, Soziale Aspekte, 54518011, Technisches Denken & Schreiben, 56451011, Technologie & Gesellschaft, 56211011, Technologiegeschichte, 56442011, Zukunftsforschung, 56047011, Fachbücher, 54071011, Genres, 52044011, Fremdsprachige Bücher

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Air Gap Structures for Advanced Metallization Schemes - Stich Andreas
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Air Gap Structures for Advanced Metallization Schemes - neues Buch

ISBN: 9783639060881

ID: 115907521

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials. Development and Electrical Characterization Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, VDM Verlag

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Air Gap Structures for Advanced Metallization Schemes - Stich Andreas
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Development and Electrical Characterization The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials. Bücher / Fremdsprachige Bücher / Englische Bücher 978-3-639-06088-1, VDM

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Air Gap Structures for Advanced Metallization Schemes - Stich, Andreas
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Air Gap Structures for Advanced Metallization Schemes - Taschenbuch

2008, ISBN: 9783639060881

[ED: Softcover], [PU: Vdm Verlag Dr. Müller], The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.2008. 160 p.Versandfertig in 3-5 Tagen, [SC: 0.00]

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Air Gap Structures for Advanced Metallization Schemes - Andreas Stich
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Air Gap Structures for Advanced Metallization Schemes - neues Buch

ISBN: 9783639060881

ID: 972be1cf21ae1c9e2f9e66019f243fd1

The RC-delay and crosstalk noise of the interconnect, [PU: VDM Verlag Dr. Müller, Saarbrücken]

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Air Gap Structures for Advanced Metallization Schemes
Autor:

Stich Andreas

Titel:

Air Gap Structures for Advanced Metallization Schemes

ISBN-Nummer:

9783639060881

The RC-delay and crosstalk noise of the interconnect system are major problems in high-performance semiconductor chips. The key is reducing the coupling capacitance or the k-value of the insulator between the metal lines by substituting silicon dioxide by low-k materials or by integrating cavities, called air gaps. Here, air gaps fabricated by the selective Ozone-TEOS deposition are considered to reduce the line-to-line capacitance. Different integration schemes were fabricated; air gaps requiring an additional lithography in Cu damascene metallization, self-aligned air gaps in Cu and in tungsten metallization, utilizing RIE (reactive ion etch) processing, and air gaps fabricated using non-conformal deposition processes for the insulator in a 90nm Al RIE metallization scheme. Structures were fabricated with and without air gaps to compare the properties and to examine different aspects such as k-value, simulations, capacitance, electrical breakdown, leakage current, electromigration, and self-heating by high current application. The results show very promising electrical properties of air gaps, exhibiting an attractive alternative to low-k materials.

Detailangaben zum Buch - Air Gap Structures for Advanced Metallization Schemes


EAN (ISBN-13): 9783639060881
ISBN (ISBN-10): 3639060881
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2008
Herausgeber: VDM Verlag
160 Seiten
Gewicht: 0,255 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 03.01.2007 17:31:10
Buch zuletzt gefunden am 18.09.2016 22:41:45
ISBN/EAN: 9783639060881

ISBN - alternative Schreibweisen:
3-639-06088-1, 978-3-639-06088-1

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