ISBN: 9783642815768
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ISBN: 9783642815768
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study i… Mehr…
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ISBN: 9783642815768
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2012, ISBN: 3642815766
[EAN: 9783642815768], Neubuch, [PU: Springer Berlin Heidelberg], GITTERFEHLER HALBLEITER BANDSTRUCTURE BANDTHEORY CRYSTAL CRYSTALSTRUCTURE CRYSTALLOGRAPHICDEFECT DIFFUSION ELECTRON ELECTR… Mehr…
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2012, ISBN: 9783642815768
Theoretical Aspects, Buch, Softcover, Softcover reprint of the original 1st ed. 1981, [PU: Springer Berlin], Springer Berlin, 2012
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ISBN: 9783642815768
Wiley & Sons, Incorporated, John. Used - Very Good. Used book that is in excellent condition. May show signs of wear or have minor defects., Wiley & Sons, Incorporated, John, 3, New… Mehr…
ISBN: 9783642815768
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study i… Mehr…
ISBN: 9783642815768
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study i… Mehr…
2012, ISBN: 3642815766
[EAN: 9783642815768], Neubuch, [PU: Springer Berlin Heidelberg], GITTERFEHLER HALBLEITER BANDSTRUCTURE BANDTHEORY CRYSTAL CRYSTALSTRUCTURE CRYSTALLOGRAPHICDEFECT DIFFUSION ELECTRON ELECTR… Mehr…
2012, ISBN: 9783642815768
Theoretical Aspects, Buch, Softcover, Softcover reprint of the original 1st ed. 1981, [PU: Springer Berlin], Springer Berlin, 2012
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Detailangaben zum Buch - Point Defects in Semiconductors I: Theoretical Aspects M. Lannoo Author
EAN (ISBN-13): 9783642815768
ISBN (ISBN-10): 3642815766
Taschenbuch
Erscheinungsjahr: 2012
Herausgeber: Springer Berlin Heidelberg Core >1
Buch in der Datenbank seit 2014-09-13T11:27:47+02:00 (Zurich)
Detailseite zuletzt geändert am 2024-02-13T23:16:51+01:00 (Zurich)
ISBN/EAN: 3642815766
ISBN - alternative Schreibweisen:
3-642-81576-6, 978-3-642-81576-8
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: friedel, lannoo
Titel des Buches: semiconductors, point, springer series solid state sciences
Daten vom Verlag:
Autor/in: M. Lannoo
Titel: Springer Series in Solid-State Sciences; Point Defects in Semiconductors I - Theoretical Aspects
Verlag: Springer; Springer Berlin
265 Seiten
Erscheinungsjahr: 2012-01-10
Berlin; Heidelberg; DE
Gedruckt / Hergestellt in Niederlande.
Sprache: Englisch
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XVII, 265 p.
BC; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; Gitterfehler; Halbleiter; band structure; band theory; crystal; crystal structure; crystallographic defect; diffusion; electron; electron correlations; long-range interaction; molecule; scattering; semiconductor; Crystallography and Scattering Methods; BB
Content.- 1. Atomic Configuration of Point Defects.- 1.1 Definition of Point Defects.- 1.2 Geometrical Configuration of Point Defects.- 1.3 Lattice Distortion and Relaxation.- 1.4 Defect Symmetry and Group Theory.- 1.5 Experimental Determination of Defect Symmetry.- 2. Effective Mass Theory.- 2.1 Simplified Presentation.- 2.2 Derivation in the One-Band Case.- 2.3 Pairing Effects.- 2.4 Experimental Observation of Shallow Levels.- 3. Simpte Theory of Deep Levels in Semiaonductors.- 3.1 The Elementary Tight-Binding Theory of Defects.- 3.2 Green’s Function Theory of Defects: Tight Binding Application.- 4. Many-Electron Effects and Sophisticated Theories of Deep Levels.- 4.1 One-Electron Self-Consistent Calculations.- 4.2 Many-electron effects. The configuration interaction.- 5. Vibrational Properties and Entropy.- 5. 1 Vibrational Modes.- 5.2 Localized Modes Due to Defects.- 5.3 Experimental Determination of Vibrational Modes.- 5.4 Vibrational Entropy.- 6. Thermodynamics of Defects.- 6.1 Enthalpy of Formation.- 6.2 Defect Concentration at Thermal Equilibrium.- 6.3 On the Nature of the Defects Present at Thermal Equilibrium.- 6.4 Experimental Determination of Enthalpies.- 6.5 The Statistical Distribution of Donor-Acceptor Pairs.- 7. Defect Migration and Diffusion.- 7.1 Jump Probability and Migration Energy.- 7.2 Experimental Determination of Migration Enthalpies.- 7.3 Charge-State Effects on Defect Migration.- 7.4 Diffusion.- References.Weitere, andere Bücher, die diesem Buch sehr ähnlich sein könnten:
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