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Silicon Carbide: Recent Major Advances: v. 79 (Advanced Texts in Physics) - Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl
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Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl:
Silicon Carbide: Recent Major Advances: v. 79 (Advanced Texts in Physics) - gebunden oder broschiert

2003, ISBN: 3540404589

[SR: 6362703], Hardcover, [EAN: 9783540404583], Springer, Springer, Book, [PU: Springer], 2003-10-08, Springer, Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume., 278161, Applied Optics, 278160, Electronics Engineering, 278141, Electronics & Communications Engineering, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 922390, Engineering Physics, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278233, Materials Science, 278229, Mechanical & Materials Engineering, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278247, Materials Testing, 278229, Mechanical & Materials Engineering, 278115, Engineering & Technology, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278433, Light, Optics & Laser, 278409, Physics, 57, Science & Nature, 1025612, Subjects, 266239, Books, 278443, States of Matter, 278409, Physics, 57, Science & Nature, 1025612, Subjects, 266239, Books, 571046, Electronics & Telecommunications Engineering, 564346, Engineering, 564334, Scientific, Technical & Medical, 1025612, Subjects, 266239, Books

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Silicon Carbide: Recent Major Advances (Advanced Texts in Physics) - Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl
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Silicon Carbide: Recent Major Advances (Advanced Texts in Physics) - gebunden oder broschiert

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[SR: 3114549], Gebundene Ausgabe, [EAN: 9783540404583], Springer, Springer, Book, [PU: Springer], Springer, 60525011, Elektronik, 60516011, Elektrotechnik, 60448011, Ingenieurwesen & Technik, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 1320249031, Optik, 60516011, Elektrotechnik, 60448011, Ingenieurwesen & Technik, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 60556011, Materialwissenschaft, 60448011, Ingenieurwesen & Technik, 60447011, Architektur, Technik & Ingenieurswesen, 54071011, Genres, 52044011, Fremdsprachige Bücher, 56398011, Festkörperphysik, 56375011, Physik, 56047011, Wissenschaft, 54071011, Genres, 52044011, Fremdsprachige Bücher, 56441011, Technologie, 56447011, Erneuerbare Energien, 56448011, Innovationen, 1320311031, Nachschlagewerke, 56444011, Nanotechnologie, 56449011, Philosophie der Technologie, 56445011, Risiken, 56446011, Sicherheit & Gesundheit, 273011011, Soziale Aspekte, 54518011, Technisches Denken & Schreiben, 56451011, Technologie & Gesellschaft, 56211011, Technologiegeschichte, 56442011, Zukunftsforschung, 56047011, Wissenschaft, 54071011, Genres, 52044011, Fremdsprachige Bücher

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Engineering; Electronics and Microelectronics, Instrumentation; Optical and Electronic Materials; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Condensed Matter Physics; Optics, Lasers, Photonics, Optical Devices Crystal growth, Helium-Atom-Streuung, PES, Silicon carbide, Transmission, crystal, diffraction, electron microscopy, microscopy, semiconductor, spectroscopy, thin film, thin films, transmission electron microscopy Books Book, Springer Science+Business Media

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Engineering; Electronics and Microelectronics, Instrumentation; Optical and Electronic Materials; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Condensed Matter Physics; Optics, Lasers, Photonics, Optical Devices Crystal growth, Helium-Atom-Streuung, PES, Silicon carbide, Transmission, crystal, diffraction, electron microscopy, microscopy, semiconductor, spectroscopy, thin film, thin films, transmission electron microscopy Books, Springer Nature

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Silicon Carbide: Recent Major Advances (Advanced Texts in Physics) (V. 79) - Choyke, Wolfgang J (Editor)
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Silicon Carbide: Recent Major Advances

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume. TOC:Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction during Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3D-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilation.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-ray Topography and High Resolution X-ray Diffraction Studies.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiC Wafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High-Voltage SiC Devices.- Power MOSFETs in 4H-SiC.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors

Detailangaben zum Buch - Silicon Carbide: Recent Major Advances


EAN (ISBN-13): 9783540404583
ISBN (ISBN-10): 3540404589
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2003
Herausgeber: Springer Berlin Heidelberg

Buch in der Datenbank seit 03.06.2007 10:42:55
Buch zuletzt gefunden am 13.06.2018 13:15:34
ISBN/EAN: 3540404589

ISBN - alternative Schreibweisen:
3-540-40458-9, 978-3-540-40458-3


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