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[EAN: 9783540404583], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CRYSTALGROWTH; HELIUM-ATOM-STREUUNG; PES; SILICONCARBIDE; TRANSMISSION; CRYSTAL; DIFFRACTION; ELECTRONMICROSCOP… Mehr…
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2004, ISBN: 9783540404583
Erscheinungsdatum: 08.10.2003, Medium: Buch, Einband: Gebunden, Titel: Silicon Carbide, Titelzusatz: Recent Major Advances, Auflage: 2004, Redaktion: Choyke, Wolfgang J. // Matsunami, Hir… Mehr…
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2003, ISBN: 3540404589
[EAN: 9783540404583], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CRYSTALGROWTH; HELIUM-ATOM-STREUUNG; PES; SILICONCARBIDE; TRANSMISSION; CRYSTAL; DIFFRACTION; ELECTRONMICROSCOP… Mehr…
2008, ISBN: 9783540404583
[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - Since the 1997 publication of 'Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology' e… Mehr…
2004
ISBN: 9783540404583
Erscheinungsdatum: 08.10.2003, Medium: Buch, Einband: Gebunden, Titel: Silicon Carbide, Titelzusatz: Recent Major Advances, Auflage: 2004, Redaktion: Choyke, Wolfgang J. // Matsunami, Hir… Mehr…
2003, ISBN: 9783540404583
Hard cover, New., Trade paperback (US). Sewn binding. Cloth over boards. 2 vols. 899 p. Contains: Unspecified. Advanced Texts in Physics., Berlin, Heidelberg, [PU: Springer]
2003, ISBN: 3540404589
[EAN: 9783540404583], New book, [SC: 28.08], [PU: Springer], Books
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Detailangaben zum Buch - Silicon Carbide
EAN (ISBN-13): 9783540404583
ISBN (ISBN-10): 3540404589
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2003
Herausgeber: Springer Berlin
Buch in der Datenbank seit 2007-06-03T10:42:55+02:00 (Zurich)
Detailseite zuletzt geändert am 2023-11-10T02:10:02+01:00 (Zurich)
ISBN/EAN: 3540404589
ISBN - alternative Schreibweisen:
3-540-40458-9, 978-3-540-40458-3
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: wolfgang gerhard, pensl, matsunami, choyke
Titel des Buches: advanced physics, recent advances, silicon carbide
Daten vom Verlag:
Autor/in: Wolfgang J. Choyke; Hiroyuki Matsunami; Gerhard Pensl
Titel: Advanced Texts in Physics; Silicon Carbide - Recent Major Advances
Verlag: Springer; Springer Berlin
899 Seiten
Erscheinungsjahr: 2003-10-08
Berlin; Heidelberg; DE
Sprache: Englisch
320,99 € (DE)
329,99 € (AT)
354,00 CHF (CH)
Available
XXXIV, 899 p. In 2 volumes, not available separately.
SA; BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Crystal growth; Helium-Atom-Streuung; PES; Silicon carbide; Transmission; crystal; diffraction; electron microscopy; microscopy; semiconductor; spectroscopy; thin film; thin films; transmission electron microscopy; Electronics and Microelectronics, Instrumentation; Optical Materials; Characterization and Analytical Technique; Surfaces, Interfaces and Thin Film; Condensed Matter Physics; Laser; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Werkstoffprüfung; Materialwissenschaft; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Laserphysik; BC
Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction During Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC: 1997–2002.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilatio.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-Ray Topography and High Resolution X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiCWafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High Voltage SiC Devices.- Power MOSFETs in 4H-SiC: Device Design and Technology.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors.SiC is an important new material for power electronics, a substrate for GaN devices and even a blue-light-emitting semiconductor The top level of SiC research is presented in this book Includes supplementary material: sn.pub/extras
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