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Silicon Carbide : Recent Major Advances - Wolfgang J. Choyke
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Silicon Carbide : Recent Major Advances - gebunden oder broschiert

2003, ISBN: 3540404589

[EAN: 9783540404583], Neubuch, [SC: 0.0], [PU: Springer Berlin Heidelberg], CRYSTALGROWTH; HELIUM-ATOM-STREUUNG; PES; SILICONCARBIDE; TRANSMISSION; CRYSTAL; DIFFRACTION; ELECTRONMICROSCOP… Mehr…

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[ED: Buch], [PU: Springer Berlin Heidelberg], Neuware - Since the 1997 publication of 'Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology' e… Mehr…

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Silicon Carbide - gebunden oder broschiert

2004

ISBN: 9783540404583

Erscheinungsdatum: 08.10.2003, Medium: Buch, Einband: Gebunden, Titel: Silicon Carbide, Titelzusatz: Recent Major Advances, Auflage: 2004, Redaktion: Choyke, Wolfgang J. // Matsunami, Hir… Mehr…

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Choyke, Wolfgang J (Editor), and Matsunami, Hiroyuki (Editor), and Pensl, Gerhard (Editor):
Silicon Carbide: Recent Major Advances - gebunden oder broschiert

2003, ISBN: 9783540404583

Hard cover, New., Trade paperback (US). Sewn binding. Cloth over boards. 2 vols. 899 p. Contains: Unspecified. Advanced Texts in Physics., Berlin, Heidelberg, [PU: Springer]

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Silicon Carbide: Recent Major Advances (Advanced Texts in Physics) - gebunden oder broschiert

2003, ISBN: 3540404589

[EAN: 9783540404583], New book, [SC: 28.08], [PU: Springer], Books

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Details zum Buch
Silicon Carbide
Autor:
Titel:
ISBN-Nummer:

3540404589


Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume. TOC:Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction during Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3D-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilation.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-ray Topography and High Resolution X-ray Diffraction Studies.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiC Wafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High-Voltage SiC Devices.- Power MOSFETs in 4H-SiC.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors

Detailangaben zum Buch - Silicon Carbide


EAN (ISBN-13): 9783540404583
ISBN (ISBN-10): 3540404589
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2003
Herausgeber: Springer Berlin

Buch in der Datenbank seit 2007-06-03T10:42:55+02:00 (Zurich)
Detailseite zuletzt geändert am 2023-11-10T02:10:02+01:00 (Zurich)
ISBN/EAN: 3540404589

ISBN - alternative Schreibweisen:
3-540-40458-9, 978-3-540-40458-3
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: wolfgang gerhard, pensl, matsunami, choyke
Titel des Buches: advanced physics, recent advances, silicon carbide

Daten vom Verlag:

Autor/in: Wolfgang J. Choyke; Hiroyuki Matsunami; Gerhard Pensl
Titel: Advanced Texts in Physics; Silicon Carbide - Recent Major Advances
Verlag: Springer; Springer Berlin
899 Seiten
Erscheinungsjahr: 2003-10-08
Berlin; Heidelberg; DE
Sprache: Englisch
320,99 € (DE)
329,99 € (AT)
354,00 CHF (CH)
Available
XXXIV, 899 p. In 2 volumes, not available separately.

SA; BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Crystal growth; Helium-Atom-Streuung; PES; Silicon carbide; Transmission; crystal; diffraction; electron microscopy; microscopy; semiconductor; spectroscopy; thin film; thin films; transmission electron microscopy; Electronics and Microelectronics, Instrumentation; Optical Materials; Characterization and Analytical Technique; Surfaces, Interfaces and Thin Film; Condensed Matter Physics; Laser; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Werkstoffprüfung; Materialwissenschaft; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Laserphysik; BC

Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction During Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC: 1997–2002.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilatio.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-Ray Topography and High Resolution X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiCWafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High Voltage SiC Devices.- Power MOSFETs in 4H-SiC: Device Design and Technology.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors.
SiC is an important new material for power electronics, a substrate for GaN devices and even a blue-light-emitting semiconductor The top level of SiC research is presented in this book Includes supplementary material: sn.pub/extras

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9783642188701 Silicon Carbide (Wolfgang J. Choyke; Hiroyuki Matsunami; Gerhard Pensl)

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