Silicon Carbide - gebunden oder broschiert

EAN (ISBN-13): 9783527410026
ISBN (ISBN-10): 3527410023
Gebundene Ausgabe
Erscheinungsjahr: 2009
Herausgeber: Wiley-VCH
980 Seiten
Gewicht: 2,248 kg
Sprache: eng/Englisch

Buch in der Datenbank seit 2009-01-30T02:30:40+01:00 (Zurich)
Detailseite zuletzt geändert am 2024-02-27T14:46:24+01:00 (Zurich)
ISBN/EAN: 9783527410026

ISBN - alternative Schreibweisen:
3-527-41002-3, 978-3-527-41002-6
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: ley, friedrich gerhard, lothar peter, friedrichs, penß, wiley vch verlag gmbh, kimoto
Titel des Buches: silicon carbide

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Daten vom Verlag:

Autor/in: Peter Friedrichs; Tsunenobu Kimoto; Lothar Ley; Gerhard Pensl
Titel: Silicon Carbide - Two Volume Set
Verlag: Wiley-VCH; Wiley-VCH
980 Seiten
Erscheinungsjahr: 2009-11-04
Gedruckt / Hergestellt in Deutschland.
Gewicht: 2,092 kg
Sprache: Englisch
299,00 € (DE)
307,40 € (AT)
Available
177mm x 247mm x 59mm

SA; BB; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Elektrizität, Magnetismus und Elektromagnetismus; Verstehen; Physik; Ingenieurwissenschaften; Electrical & Electronics Engineering; Electronic Materials; Elektronische Materialien; Elektrotechnik u. Elektronik; Halbleiter; Halbleiterphysik; Physics; Physik; Semiconductor Physics; Semiconductors; Siliziumkarbid; Elektronische Materialien; Halbleiter; Halbleiterphysik

VOL 1: Growth, Defects, and Novel Applications 1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution 2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds 3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique 4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects 5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches 6) EPR Identification of Intrinsic Defects in 4H-SiC 7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide 8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC 9) Characterization of defects in silicon carbide by Raman spectroscopy 10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation 11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers 12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation 13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation 14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors 15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems 16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces 17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS 18) Epitaxial Graphene: an new Material 19) Density Functional Study of Graphene Overlayers on SiC VOL 2: Power Devices and Sensors 1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices 2) Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application 3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts 4) Reliability aspects of SiC Schottky Diodes 5) Design, process, and performance of all-epitaxial normally-off SiC JFETs 6) Extreme Temperature SiC Integrated Circuit Technology 7) 1200 V SiC Vertical-channel-JFET based cascode switches 8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors 9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen 10) 4H-SiC MISFETs with Nitrogen-containing Insulators 11) SiC Inversion Mobility 12) Development of SiC diodes, power MOSFETs and intellegent Power Modules 13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation 14) Application of SiC-Transistors in Photovoltaic-Inverters 15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs 16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs 17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection