2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Mehr…
booklooker.de |
2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Mehr…
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2011, ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
alibris.co.uk |
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
alibris.co.uk |
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
alibris.co.uk |
2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Mehr…
2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Mehr…
2011
ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
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Detailangaben zum Buch - Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)
EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Gebundene Ausgabe
Erscheinungsjahr: 2010
Herausgeber: Springer
252 Seiten
Gewicht: 0,633 kg
Sprache: eng/Englisch
Buch in der Datenbank seit 2011-04-09T21:17:05+02:00 (Zurich)
Detailseite zuletzt geändert am 2023-07-05T19:56:42+02:00 (Zurich)
ISBN/EAN: 9783709103814
ISBN - alternative Schreibweisen:
3-7091-0381-9, 978-3-7091-0381-4
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: viktor
Titel des Buches: mosfet, mosfets, viktor, microelectronics
Daten vom Verlag:
Autor/in: Viktor Sverdlov
Titel: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs
Verlag: Springer; Springer Wien
252 Seiten
Erscheinungsjahr: 2010-11-24
Vienna
Sprache: Englisch
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
Available
XIV, 252 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; EA; BC
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givencomprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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