Viktor Sverdlov: Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
[ED: Taschenbuch], [PU: Springer Vienna], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools… Mehr…
[ED: Taschenbuch], [PU: Springer Vienna], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 240x168x14 mm, 268, [GW: 453g], offene Rechnung (Vorkasse vorbehalten), PayPal, Banküberweisung, Internationaler Versand<
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Viktor Sverdlov: Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
2016, ISBN: 3709119332
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOS… Mehr…
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. 268 pp. Englisch<
Viktor Sverdlov: Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
Paperback, [PU: SPRINGER VERLAG GMBH], Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for… Mehr…
Paperback, [PU: SPRINGER VERLAG GMBH], Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given., Electronics Engineering<
Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
[ED: Taschenbuch], [PU: Springer Vienna], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools… Mehr…
[ED: Taschenbuch], [PU: Springer Vienna], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given., DE, [SC: 0.00], Neuware, gewerbliches Angebot, 240x168x14 mm, 268, [GW: 453g], offene Rechnung (Vorkasse vorbehalten), PayPal, Banküberweisung, Internationaler Versand<
Versandkosten:Versandkostenfrei, Versand nach Deutschland. (EUR 0.00) Che & Chandler Versandbuchhandlung u. Antiquariat
Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
2016, ISBN: 3709119332
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOS… Mehr…
[EAN: 9783709119334], Neubuch, [SC: 0.0], [PU: Springer Vienna Aug 2016], SEMICONDUCTOR DEVICES; STRAIN TECHNIQUE; TRANSPORT MODELING, Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. 268 pp. Englisch<
Viktor Sverdlov: Strain-Induced Effects in Advanced MOSFETs - Taschenbuch
ISBN: 9783709119334
Paperback, [PU: SPRINGER VERLAG GMBH], Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for… Mehr…
Paperback, [PU: SPRINGER VERLAG GMBH], Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given., Electronics Engineering<
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Detailangaben zum Buch - Strain-Induced Effects in Advanced MOSFETs
EAN (ISBN-13): 9783709119334 ISBN (ISBN-10): 3709119332 Gebundene Ausgabe Taschenbuch Erscheinungsjahr: 2016 Herausgeber: Springer Wien
Buch in der Datenbank seit 2017-08-31T17:55:17+02:00 (Zurich) Detailseite zuletzt geändert am 2020-12-13T12:15:22+01:00 (Zurich) ISBN/EAN: 9783709119334
ISBN - alternative Schreibweisen: 3-7091-1933-2, 978-3-7091-1933-4 Alternative Schreibweisen und verwandte Suchbegriffe: Autor des Buches: viktor, vik Titel des Buches: mosfets, mosfet, viktor
Daten vom Verlag:
Autor/in: Viktor Sverdlov Titel: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs Verlag: Springer; Springer Wien 252 Seiten Erscheinungsjahr: 2016-08-23 Vienna Gedruckt / Hergestellt in Niederlande. Sprache: Englisch 160,49 € (DE) 164,99 € (AT) 177,00 CHF (CH) POD XIV, 252 p.
BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; BB
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given comprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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