ISBN: 9783642815768
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ISBN: 9783642815768
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2012, ISBN: 3642815766
[EAN: 9783642815768], Neubuch, [PU: Springer Berlin Heidelberg], GITTERFEHLER HALBLEITER BANDSTRUCTURE BANDTHEORY CRYSTAL CRYSTALSTRUCTURE CRYSTALLOGRAPHICDEFECT DIFFUSION ELECTRON ELECTR… Mehr…
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Theoretical Aspects, Buch, Softcover, Softcover reprint of the original 1st ed. 1981, [PU: Springer Berlin], Springer Berlin, 2012
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ISBN: 9783642815768
Wiley & Sons, Incorporated, John. Used - Very Good. Used book that is in excellent condition. May show signs of wear or have minor defects., Wiley & Sons, Incorporated, John, 3, New… Mehr…
ISBN: 9783642815768
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study i… Mehr…
ISBN: 9783642815768
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study i… Mehr…
2012, ISBN: 3642815766
[EAN: 9783642815768], Neubuch, [PU: Springer Berlin Heidelberg], GITTERFEHLER HALBLEITER BANDSTRUCTURE BANDTHEORY CRYSTAL CRYSTALSTRUCTURE CRYSTALLOGRAPHICDEFECT DIFFUSION ELECTRON ELECTR… Mehr…
2012, ISBN: 9783642815768
Theoretical Aspects, Buch, Softcover, Softcover reprint of the original 1st ed. 1981, [PU: Springer Berlin], Springer Berlin, 2012
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Detailangaben zum Buch - Point Defects in Semiconductors I: Theoretical Aspects M. Lannoo Author
EAN (ISBN-13): 9783642815768
ISBN (ISBN-10): 3642815766
Taschenbuch
Erscheinungsjahr: 2012
Herausgeber: Springer Berlin Heidelberg Core >1
Buch in der Datenbank seit 2014-09-13T11:27:47+02:00 (Zurich)
Detailseite zuletzt geändert am 2024-02-13T23:16:51+01:00 (Zurich)
ISBN/EAN: 3642815766
ISBN - alternative Schreibweisen:
3-642-81576-6, 978-3-642-81576-8
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: friedel, lannoo
Titel des Buches: semiconductors, point, springer series solid state sciences
Daten vom Verlag:
Autor/in: M. Lannoo
Titel: Springer Series in Solid-State Sciences; Point Defects in Semiconductors I - Theoretical Aspects
Verlag: Springer; Springer Berlin
265 Seiten
Erscheinungsjahr: 2012-01-10
Berlin; Heidelberg; DE
Gedruckt / Hergestellt in Niederlande.
Gewicht: 0,446 kg
Sprache: Englisch
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XVII, 265 p.
BC; Crystallography and Scattering Methods; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Werkstoffprüfung; Verstehen; Gitterfehler; Halbleiter; band structure; band theory; crystal; crystal structure; crystallographic defect; diffusion; electron; electron correlations; long-range interaction; molecule; scattering; semiconductor; Crystallography and Scattering Methods; BB
Content.- 1. Atomic Configuration of Point Defects.- 1.1 Definition of Point Defects.- 1.2 Geometrical Configuration of Point Defects.- 1.2.1 The Vacancy.- 1.2.2 The Divacancy.- 1.2.3 The Interstitial.- 1.2.4 Complex Defects.- 1.2.5 Aggregates.- 1.3 Lattice Distortion and Relaxation.- 1.4 Defect Symmetry and Group Theory.- 1.4.1 Factorization of the Hamiltonian.- 1.4.2 Irreducible Representations.- 1.4.3 The example of the Vacancy in the Diamond Lattice.- 1.4.4 Various Points of Interest.- 1.4.5 Basis Functions for Irreducible Representations.- 1.4.6 Simplification of Matrix Elements by Symmetry.- 1.5 Experimental Determination of Defect Symmetry.- 1.5.1 Splitting Under Unaxial Stress.- a) General Considerations.- b) Splitting of a Twofold Degenerate E State in the Group Td.- c) The Case of a T2 State.- d) Lowering of Symmetry and Orientational Degeneracy.- 1.5.2 Dipolar Transitions.- 1.5.3 Other Excitations.- 2. Effective Mass Theory.- 2.1 Simplified Presentation.- 2.2 Derivation in the One-Band Case.- 2.2.1 The Case of One Band with One Extremum.- 2.2.2 The Case of Equivalent Extrema.- 2.2.3 Validity of the Approximations.- 2.2.4 Generalization to the Case of a Degenerate Extremum.- 2.3 Pairing Effects.- 2.3.1 An Electron Bound to a Donor-Acceptor Pair.- 2.3.2 The Neutral Donor-Acceptor Pair.- 2.3.3 Density of States.- 2.4 Experimental Observation of Shallow Levels.- 2.4.1 Experimental Techniques.- 2.4.2 Results.- 2.4.3 Pairing Effects.- 3. Simpte Theory of Deep Levels in Semiaonductors.- 3.1 The Elementary Tight-Binding Theory of Defects.- 3.1.1 Basic Principles of the Tight-Binding Approximation.- 3.1.2 The Tight Binding Matrix Elements for Sp Covalently Bonded Solids.- 3.1.3 Formation of the Band Structure.- a) The Molecular Model.- b) Broadening Effects: A Simple Description.- c) Refi nements.- 3.1.4 The Vacancy in a Covalently Bonded Linear Chain.- 3.1.5 The Vacancy in a Covalent Crystal.- 3.1.6 The Interstitial.- 3.1.7 The Substitutional Impurity.- 3.2 Green’s Function Theory of Defects: Tight Binding Application.- 3.2.1 Relation Between the Resolvant or Green’s Operator and the Density of States.- 3.2.2 Local Densities of States and Green’s Functions.- 3.2.3 Green’s Function Treatment of Local Perturbations.- 3.2.4 Application to the Koster-Slater Problem.- 3.2.5 Green’s Function and Method of Moments.- 3.2.6 Green’s Function for a Semiinfinite Chain: Application to the Vacancy.- 3.2.7 Refined Tight-Binding Green’s Functions Treatments.- 4. Many-Electron Effects and Sophisticated Theories of Deep Levels.- 4.1 One-Electron Self-Consistent Calculations.- 4.1.1 Charge-Dependent Tight-Binding Treatment.- 4.1.2 The Model of HALDANE and ANDERSON.- 4.1. 3 The CNDO Method.- 4.1.4 The Extended Hückel Theory.- 4.1.5 Self-Consistent Green’s Function Calculations.- 4.1.6 A Thomas-Fermi Interpretation of the Self-Consistent Potential.- 4.2 Many-electron effects. The configuration interaction.- 4.2.1 The H2 Molecule.- a) Notations.- b) Exact Solution.- c) Restricted Hartree-Fock Solution and Configuration Interaction.- d) Unrestricted Hartree-Fock Solution.- e) Direct Use of Symmetry Properties.- 4.2.2 The Vacancy in Covalent Systems.- a) Description of the Model.- b) The Different Configurations.- c) Discussion of the Results.- d) Validity of the One-Electron Theories.- 5. Vibrational Properties and Entropy.- 5. 1 Vibrational Modes.- 5.1.1 The Dynamical Matrix.- 5.1.2 The Linear Chain.- 5.1.3 The Linear Chain with Two Atoms Per Unit Cell.- 5.1.4 The Covalent Solid.- 5.2 Localized Modes Due to Defects.- 5.2.1 The Mass Defect in the Monoatomic Linear Chain.- 5.2.2 The Mass Defect in the General Case.- 5.2.3 Expansion of the Greeen’s Function.- 5.2.4 The Vacancy.- 5.3 Experimental Determination of Vibrational Modes.- 5.4 Vibrational Entropy.- 5.4.1 General Expression.- 5.4.2 Expansion in Moments.- 5.4.3 The Vacancy.- 5.4.4 The Vacancy in Covalent Materials.- a) Entropy of Formation.- b) Entropy of Migration.- 5.4.5 Exact Calculation of Entropy Changes.- 5.4.6 Experimental Determination of Entropies.- 6. Thermodynamics of Defects.- 6.1 Enthalpy of Formation.- 6.2 Defect Concentration at Thermal Equilibrium.- 6.2.1 The Case of One Kind of Defect at Low Concentration.- 6.2.2 Generalization to Several Kinds of Independent Defects and Internal Degrees of Freedom.- 6.2.3 Equilibriurn Between Charged States.- 6.2.4 Defects in Short-Range Interaction.- 6.2.5 The case of Long-Range Interaction.- 6.2.6 Defect Concentration in a Stoechiometric Compound.- 6.3 On the Nature of the Defects Present at Thermal Equilibrium.- 6.4 Experimental Determination of Enthalpies.- 6.5 The Statistical Distribution of Donor-Acceptor Pairs.- 7. Defect Migration and Diffusion.- 7.1 Jump Probability and Migration Energy.- 7.1.1 The Rate Theory.- 7.1.2 The Dynamical Theory.- 7.2 Experimental Determination of Migration Enthalpies.- 7.3 Charge-State Effects on Defect Migration.- 7.3.1 Weiser’s Theory.- 7.3.2 Ionization Enhanced Migration.- a) Electrostriction Mechanism.- b) Normal Ionization Enhanced Mechanism.- c) Athermal Ionization Enhanced Mechanism.- d) Energy Released Mechanism.- 7.4 Diffusion.- 7.4.1 Fick’s Law.- 7.4.2 Experimental Determination of a Diffusion Coefficient.- 7.4.3 Self-Diffusion.- 7.4.4 Substitutional Impurity Diffusion.- 7.4.5 Interstitial Impurity Diffusion.- References.Weitere, andere Bücher, die diesem Buch sehr ähnlich sein könnten:
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